发明名称 |
SINGLE CRYSTAL AND ITS PRODUCING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a mass-producing method for a suitable oxide or fluoride single crystal being hardly changing composition and where yield at the production of a higher harmonic wave-generating element by a micro pulling-down method can be increased. SOLUTION: The raw material of the single crystal is melted in a crucible 7 with a nozzle 13 and a seed crystal is in contact with a melt 18. The single crystal is grown by pulling down the melt from a nozzle opening 13. The melt 18 is pulled down at the state that the center axis C of the seed crystal is apart from the center axis N of the nozzle opening or that the seed crystal is moved with a periodic motion to the nozzle opening. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005239535(A) |
申请公布日期 |
2005.09.08 |
申请号 |
JP20040340614 |
申请日期 |
2004.11.25 |
申请人 |
NGK INSULATORS LTD |
发明人 |
IMAI KATSUHIRO;IWAI MAKOTO;IMAEDA MINORU |
分类号 |
G02F1/37;C30B15/08;C30B29/12;C30B29/30;(IPC1-7):C30B15/08 |
主分类号 |
G02F1/37 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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