发明名称 SINGLE CRYSTAL AND ITS PRODUCING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a mass-producing method for a suitable oxide or fluoride single crystal being hardly changing composition and where yield at the production of a higher harmonic wave-generating element by a micro pulling-down method can be increased. SOLUTION: The raw material of the single crystal is melted in a crucible 7 with a nozzle 13 and a seed crystal is in contact with a melt 18. The single crystal is grown by pulling down the melt from a nozzle opening 13. The melt 18 is pulled down at the state that the center axis C of the seed crystal is apart from the center axis N of the nozzle opening or that the seed crystal is moved with a periodic motion to the nozzle opening. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005239535(A) 申请公布日期 2005.09.08
申请号 JP20040340614 申请日期 2004.11.25
申请人 NGK INSULATORS LTD 发明人 IMAI KATSUHIRO;IWAI MAKOTO;IMAEDA MINORU
分类号 G02F1/37;C30B15/08;C30B29/12;C30B29/30;(IPC1-7):C30B15/08 主分类号 G02F1/37
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