| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of removing a native oxide film grown on the surface of a wafer. SOLUTION: The substrate processing device is provided with a supply-side pod opener 20, with which a batch type CVD device 10 opens and closes the pod storing the wafer to be processed; a first transfer room 42, in which a first wafer transfer device 45 takes out a wafer to be processed, and transfers it to a removal chamber 92 with an oxide film removing device 90; a second transfer room 52 contiguous to a waiting room 63, where a boat 87 is waiting for carrying-in and carrying-out the wafer to/from the processing chamber; an outlet-side pod opener 30 contiguous to the second transfer room 52, which opens and closes the pod of a processed wafer; and a buffer chamber 132 interposed in between the first transfer room 42 and the second transfer room 52. After the supplying of the wafer to be processed to the removal chamber 92 using the first wafer transfer equipment 45 and removing an oxide film, the wafer is carried in to the waiting room 63 with the second wafer transfer equipment 55 via the buffer chamber 132. The processed wafer in the waiting room 63 is carried out with the second wafer transfer equipment 55 to the outlet-side pod opener 30. COPYRIGHT: (C)2005,JPO&NCIPI
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