发明名称 |
Electrostatic discharge protection apparatus for semiconductor integrated circuit, has electrostatic discharge protection circuit connected in between doping zone and ground potential connection |
摘要 |
<p>An electrostatic discharge (ESD) protection apparatus has an ESD protection circuit (ESDSS) connected in between a doping zone formed as a substrate (S) and a ground potential connection (VSS) connected to the doping zone. The ESD protection circuit is designed so that the doping zone is at a minimum of potentials present at the supply voltage potential connections (VDD,VDDP) and at the ground potential connection.</p> |
申请公布号 |
DE102004007655(A1) |
申请公布日期 |
2005.09.08 |
申请号 |
DE20041007655 |
申请日期 |
2004.02.17 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GLASER, ULRICH;GOSNER, HARALD;SCHNEIDER, JENS;STREIBL, MARTIN |
分类号 |
H01L23/60;H01L27/02;H01L27/082;(IPC1-7):H01L23/60 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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