发明名称 Electrostatic discharge protection apparatus for semiconductor integrated circuit, has electrostatic discharge protection circuit connected in between doping zone and ground potential connection
摘要 <p>An electrostatic discharge (ESD) protection apparatus has an ESD protection circuit (ESDSS) connected in between a doping zone formed as a substrate (S) and a ground potential connection (VSS) connected to the doping zone. The ESD protection circuit is designed so that the doping zone is at a minimum of potentials present at the supply voltage potential connections (VDD,VDDP) and at the ground potential connection.</p>
申请公布号 DE102004007655(A1) 申请公布日期 2005.09.08
申请号 DE20041007655 申请日期 2004.02.17
申请人 INFINEON TECHNOLOGIES AG 发明人 GLASER, ULRICH;GOSNER, HARALD;SCHNEIDER, JENS;STREIBL, MARTIN
分类号 H01L23/60;H01L27/02;H01L27/082;(IPC1-7):H01L23/60 主分类号 H01L23/60
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