| 摘要 |
PROBLEM TO BE SOLVED: To provide an active matrix substrate in which a faulty connection in a storage capacitor element caused by a short circuit between storage capacitor electrodes due to conductive contamination or a pinhole in an insulating layer or by a short circuit between a data signal line and a storage capacitor upper electrode can be repaired with ease. SOLUTION: The active matrix substrate is an active matrix substrate comprising a thin film transistor disposed at the intersection of a scanning signal line and a data signal line on a substrate, with a gate electrode of the transistor being connected to the scanning signal line, a source electrode thereof being connected to the data signal line and a drain electrode thereof being connected to an interconnection electrode, and a storage capacitor upper electrode disposed so as to oppose a storage capacitor wiring pattern at least across an insulating layer and connected to an interconnection electrode and a pixel electrode, wherein the storage capacitor upper electrode comprises at least three divided electrodes in the region opposing the storage capacitor wiring pattern. COPYRIGHT: (C)2005,JPO&NCIPI |
