| 摘要 |
PROBLEM TO BE SOLVED: To provide a configuration for removing nickel from a silicon film crystallized using nickel. SOLUTION: In the method for manufacturing a crystalline semiconductor film 104, a metal element for promoting the crystallization of silicon is introduced into a first amorphous semiconductor film 102; the first amorphous semiconductor film is heated to form the crystal semiconductor film; a barrier film 105 is formed on the crystalline semiconductor film; a second amorphous semiconductor film 106 containing an element belonging to 15 group in a periodic table is formed on the barrier film 105; and the crystalline semiconductor film 104 and the second amorphous semiconductor film 106 are heated, thus making the metal element move to the second amorphous semiconductor film 106. COPYRIGHT: (C)2005,JPO&NCIPI
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