| 摘要 |
PROBLEM TO BE SOLVED: To provide a dynamic type semiconductor memory device which is small in layout area, high in redundancy relieving rate and can secure a redundancy relieving while devising measures for a standby current defect caused by a short circuit of a bit line and a word line. SOLUTION: One current limiting element is provided commonly for an equalize-circuit for a pair of bit lines of one side and an eaualize-circuit for a pair of bit lines of the other side, and a bit line pre-charge potintial is supplied to equalize-circuits of both sides. COPYRIGHT: (C)2005,JPO&NCIPI
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