| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a Ga compound-doped polycrystalline silicon, in which the accuracy of the measurement and the workability of Ga doping are improved and to provide the Ga compound-doped polycrystalline silicon hardly causing photo-degradation and having high conversion efficiency stably. SOLUTION: A polycrystalline silicon is grown by doping a Ga compound which is solid at a temperature higher than the ordinary temperature. As a result, the accuracy and workability in weighing are improved compared to that in a conventional one. When the Ga compound-doped polycrystalline silicon is used for a solar cell, photo-degradation is hardly caused and high conversion efficiency is stably provided. COPYRIGHT: (C)2005,JPO&NCIPI
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