High frequency semiconductor device

摘要

A high frequency semiconductor device including: at least two high frequency semiconductor chips each having an output electrode pad and a circuit; a frame having a die bond area in which the high frequency semiconductor chips are mounted; a plurality of leads which electrically connect the circuits of the respective high frequency semiconductor chips to an external device; and a plurality of output terminal connection wires connected between the output electrode pads of the respective chips and the corresponding leads, wherein the high frequency semiconductor chips are disposed in the die bond area with the output electrode pad of one of the high frequency semiconductor chips being spaced at least a first predetermined distance from the output electrode pad of the other high frequency semiconductor chip, and wherein the output terminal connection wire connected to the output electrode pad of the one high frequency semiconductor chip is spaced at least a second predetermined distance from the output terminal connection wire connected to the output electrode pad of the other high frequency semiconductor chip.