Semiconductor device and method for fabricating the same

摘要

A semiconductor device includes: a gate electrode formed on a substrate; impurity regions formed in the substrate and to both sides of the gate electrode; a first interlayer insulating film formed to cover the gate electrode; and a second interlayer insulating film formed so as to be aligned in a direction parallel to the principal surface of the substrate and adjacent to the gate electrode with a part of the first interlayer insulating film interposed therebetween. The second interlayer insulating film has a lower relative permeability than the first interlayer insulating film.