| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which can operate at low voltage while maintaining a satisfactory light emission output. <P>SOLUTION: The gallium nitride-based compound semiconductor multilayer structure comprises an n-type layer, an active layer, and a p-type layer formed on the substrate with the active layer interposed between the n-type layer and the p-type layer, the active layer having a thick film portion and a thin film portion, wherein the active layer has a flat bottom surface (on the substrate side) and an uneven top surface so as to form the thick film portion and the thin film portion. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
