| 摘要 |
PROBLEM TO BE SOLVED: To provide a doping mask for forming wells having different concentrations in a single ion implantation operation, and methods for manufacturing a charge transfer image device and a semiconductor element using the doping mask. SOLUTION: A peripheral circuit region B on a substrate 10 has no photoresist film. A photoresist pattern PR in which openings 50 are repeatedly formed at a predetermined pitches is formed in a pixel region A. Ions are implanted at the same concentration level into the entire surface of the substrate 10 by using the photoresist pattern PR as a doping mask, and subsequently an annealing operation is performed. The pitch a in the photoresist pattern PR is a width where ions implanted through the doping mask diffuse toward those implanted through an adjacent opening 50 to form wells. Thus, well regions having different concentrations can be formed at the same time. COPYRIGHT: (C)2005,JPO&NCIPI
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