| 摘要 |
PROBLEM TO BE SOLVED: To raise a resistance to breakdown and to reduce a chip size. SOLUTION: In a semiconductor device, one element having a main junction is formed on the principal plane of a semiconductor substrate, and the other element is formed on the main junction via an insulation film. A drawn electrode having a plurality of contacts with the main junction is arranged at an intersection where the other element and the main junction cross each other via the insulation film. Due to this structure, concentration of current can be relaxed and thereby a resistance to breakdown can be improved. Furthermore, the chip size can be reduced while keeping the resistance to breakdown as it is. COPYRIGHT: (C)2005,JPO&NCIPI
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