| 摘要 |
PROBLEM TO BE SOLVED: To alleviate a load applied on a ferro-electric capacitor at the time of high speed access in a FeRAM using the ferro-electric capacitor. SOLUTION: For example, this semiconductor storage device is so configured that an equalizer circuit 16 is connected to a pair of bit lines BLcell, /BLcell on a cell array CA side, and after amplifying a data read from the ferro-electric capacitor 2 by a sense amplifier 13, a bit line selection signalψt0 is made to "L", thus, the pair of bit lines BLcell, /BLcell on the cell array CA side is electrically separated from a pair of bit lines BLsa, /BLsa. After that, the equalizer circuit 16 equalizes potentials of the pair of bit lines BLcell, /BLcell on the cell array CA side to "L". COPYRIGHT: (C)2005,JPO&NCIPI
|
