发明名称 |
Plasma processing method and plasma processing device |
摘要 |
When plasma ashing is performed on a resist on a wafer, deposit gas containing at least one type of deposit component to be generated from a resist by ashing is added to a gas for plasma generation supplied from a gas supply system for plasma generation, by a deposit gas supply system. By this, the deposit component is actively deposited on the inner surface of a wafer processing chamber so as to protect the inner face of the wafer processing chamber from plasma. As a result, damage of the wafer processing chamber during ashing and particle generation due to the damage are prevented.
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申请公布号 |
US2005194354(A1) |
申请公布日期 |
2005.09.08 |
申请号 |
US20050060316 |
申请日期 |
2005.02.18 |
申请人 |
MATSUSHITA ELEC. IND. CO., LTD. |
发明人 |
ONISHI KATSUHIKO;BITO YOJI |
分类号 |
H05H1/00;B44C1/22;H01L21/302;H01L21/304;H01L21/3065;(IPC1-7):B44C1/22 |
主分类号 |
H05H1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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