发明名称 |
BIASING CIRCUIT, SOLID STATE IMAGING DEVICE COMPRISING THE BIASING CIRCUIT, AND METHOD FOR FABRICATING THE SAME |
摘要 |
<p>A biasing circuit for a charge-coupled device (CCD) includes one or more transistors and a nonvolatile memory cell connected in series between a first electric potential node and a second electric potential node and configured to produce a bias voltage at a node between the nonvolatile memory and one of the one or more transistors. The one or more transistors may include one or more transistors coupled in series between a first terminal of the nonvolatile memory cell and the first electric potential node, and one or more transistors coupled in series between a second terminal of the nonvolatile memory cell and the second electric potential node. The nonvolatile memory cell may include a flash memory cell, e.g., a stacked-gate-type flash memory cell and/or a split-gate-type flash memory cell.</p> |
申请公布号 |
KR20050089501(A) |
申请公布日期 |
2005.09.08 |
申请号 |
KR20040014955 |
申请日期 |
2004.03.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LYU, JEONG HO;NAM, JUNG HYUN;ROH, JAE SEOB |
分类号 |
H01L27/146;H01L21/822;H01L21/8247;H01L23/58;H01L27/04;H01L27/115;H01L27/148;H01L29/788;H01L29/792;H04N5/335;H04N5/372;(IPC1-7):H04N5/335 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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