| 摘要 |
A semiconductor device (20, 21, 22) comprising a channel region (4) of a first conductivity type formed in the surface layer portion of a semiconductor substrate (1), a source region (25) of a second conductivity type different from the first conductivity type formed at the rim of a trench (17) formed through the channel region (4), a drain region (2) of the second conductivity type formed in the portion adjacent to the bottom of the trench (17), a gate insulating film (13) formed along the inner wall of the trench (17), a gate electrode (26, 36) opposed to the channel region (4) with the gate insulating film (13) interposed therebetween, a conductive layer (37, 40, 40a, 40b) so formed in the trench (17) as to be nearer to the drain region (2) than the gate electrode (26, 36), and an insulating layer (15) surrounding the conductive layer (37, 40, 40a, 40b) and electrically insulating the conductive layer (37, 40, 40a, 40b) from the gate electrode (26, 36) and the drain region (2).
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