发明名称 HEATSINK FOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To obtain a heatsink in which a cost is low, the heat conductivity is good, an initial strength of a fixed value or more is held, while a softening temperature is relatively at a high level and further the reliability in a solder joint for a joint board or semiconductor device is good, and its thickness is 2 mm or more. <P>SOLUTION: The heatsink for the semiconductor device made of copper-based alloy contains, in terms of mass%, P of 0.05% or less, and an M element and P of 0.065 to 0.3% (wherein M denotes at least one kind of Fe, Co and Ni), and the remainder is composed of copper and an inevitable impurity. The heatsink has a metal formation in which an M-P series compound is dispersed in a copper matrix, and the heat conductivity is 340 W/mk or more, Vickers hardness is HV100 or more, and the Vickers hardness after heating at 400&deg;C for 30 minutes is 80% or more of the Vickers hardness before heating. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005243821(A) 申请公布日期 2005.09.08
申请号 JP20040050092 申请日期 2004.02.25
申请人 DOWA MINING CO LTD 发明人 KANEMITSU YUICHI;ENDO HIDEKI;YANASE SHINGO
分类号 C22C9/05;H01L23/373 主分类号 C22C9/05
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