发明名称 MANUFACTURING METHOD OF MESA-TYPE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a high breakdown voltage and high reliability, by preventing cracks or chipping in a chip, in the element partitioning process of the mesa-type semiconductor device having glass coating. SOLUTION: The manufacturing method of the mesa-type semiconductor device comprises a coating process of grooves for separating between the elements by glass coating, and a process of partitioning respective elements by cutting the central part of the grooves by a dicing blade. The feeding speed of dicing in the dicing blade is kept so as to be a low speed in the initial stage of cutting, and the cutting is carried out by gradually increasing the dicing speed thereafter. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005243893(A) 申请公布日期 2005.09.08
申请号 JP20040051103 申请日期 2004.02.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HASHIZUME SHINGO;NAKAMURA HIDEKAZU;SODA SHIGETOSHI
分类号 H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/301
代理机构 代理人
主权项
地址