| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be reduced in size, by reducing the area of a substrate and by reducing the occupying area of a thin-film resistor element on the substrate. SOLUTION: Since each wiring layer 83 is provided between a second interlayer insulating film 84 and a first interlayer insulating film 82, the portion on each wiring layer 83 rises in a ridge structure and the portion (sections between each of wiring layers 83) on the first interlayer insulating film 82 is recessed in a furrow structure on the surface of the second interlayer insulating film 84. Thus, a step composed of recessed and projecting sections corresponding to each wiring layer 83 is produced on the surface of the second interlayer insulating film 84. Consequently, recessed and projecting sections are also produced on a conductive film 11 formed on the second interlayer insulating film 84 by the step formed on the surface of the insulating film 84, and the surface area of the conductive film 11 becomes larger due to the recessed and projecting sections. In addition, the thin-film resistor element 12 is formed of the conductive film 11. The element 12 is formed in an active regionα, in which each wiring layer 83, an active element, such as the transistor, diode, etc., are formed. COPYRIGHT: (C)2005,JPO&NCIPI
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