| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film thickness evaluating method for accurately evaluating the film thickness during grinding, at grinding a film. <P>SOLUTION: At grinding of an oxide film formed on a wafer 10 by a CMP, the surface of the oxide film is irradiated with the rays of light so that a reflection spectrum can be obtained by using a spectral reflectance measuring device 7, and the difference signal, of the refection spectrum of grinding time t and t-▵t with a proper time difference ▵t isolated, is calculated by using a computer 8; and the difference signal is analyzed by using an optical model so that film thickness in the grinding time t of the oxide film is derived. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
