NANOSCALE FIELD-EFFECT DEVICE WITH SPACE BETWEEN SOURCE AND DRAIN ELECTRODES PROCESSED WITH SELF-ORGANIZED MULTILAYER FILM, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nanometer-sale field-effect device, wherein a signal responds only to a specific electric field at room temperature, and to provide its manufacturing method. SOLUTION: A field effect device is comprised of a source electrode prepared in nanometer scale, a gate electrode and a drain electrode that are formed on a semiconductor substrate. Then, a space on the semiconductor substrate between the source and drain electrodes is covered by a film, that is formed by stacking a metal thiolate as a compound of carboxy tiol and metal, represented by general Formula, HOOC(CH2)nSH (n: an integer of 3 to 30), thereby obtaining a nanometer scale field-effect device. COPYRIGHT: (C)2005,JPO&NCIPI