发明名称 HIGH FREQUENCY SWITCH APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a high frequency switch apparatus in which transmission and reception are switched over by a single control signal, no signal is leaked in the case of transmission or reception, and FETs having the same structure are used to reduce manufacture costs and circuit area. SOLUTION: The high frequency switch apparatus includes: a switch circuit; a terminal; and a logic inverter circuit. The switch circuit includes: a first FET which has a first threshold voltage and connects or disconnects a route of transmission signals; and a second FET which connects or disconnects a route of reception signals, and switches a transmission mode and a reception mode. The terminal is connected to a gate electrode of the second FET, and receives a control signal for switching the transmission mode and the reception mode. The logic inverter circuit includes a differential circuit in which third and fourth FETs having the substantially same threshold voltage as the first threshold voltage are included and source electrodes of the third and fourth FETs are connected with each other, and outputs, during the transmission mode, a first voltage approximately equal to a high level of the control signal to a gate electrode of the first FET. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005244850(A) 申请公布日期 2005.09.08
申请号 JP20040054909 申请日期 2004.02.27
申请人 TOSHIBA CORP 发明人 SESHIMO TOSHIKI;SAKAE YOSHITOMO
分类号 H03K17/693;H04L12/26;(IPC1-7):H03K17/693 主分类号 H03K17/693
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