| 摘要 |
PROBLEM TO BE SOLVED: To provide an IC including E-pHEMTs (Enhancement Mode Pseudomorphic High Electron Mobility Transistors) having a ptotective function against on-chip electrostatic discharge without inviting enlargement of the size of the IC. SOLUTION: E-pHEMTs 102A, 102B are formed on the board of the IC 100. Each E-pHEMT has a source electrode, drain electrode, and a gate electrode, and a recess is formed between the gate electrode and the drain electrode by etching to give a relatively large gap between the gate electrode and the drain electrode. As a result, the E-pHEMT is protected from electrostatic discharge even if it happens at the drain electrode. COPYRIGHT: (C)2005,JPO&NCIPI
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