SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To form a film of high quality by improving dispersion in film thickness uniformity in a selective growth process in a batch type processing device. SOLUTION: A plurality of wafers 200 as a substrate are mounted and stored on a boat 217 in a processing chamber 201 formed inside a reaction tube 11. A plurality of wafers 200 are heated by a heater 12 as a heating means provided to the outside of the processing chamber 201. A main gas nozzle 13 is provided for supplying Si system reaction gas and etching gas simultaneously from the upper part of a substrate processing region 203 for processing the mounted wafer 200. In addition to the main gas nozzle 13, a gas supplement nozzle 152 is provided for supplementing etching gas in the middle of the substrate processing region 203. The lower part of the substrate processing region 203 is provided with an evacuation opening 43 for evacuating the processing chamber 201. COPYRIGHT: (C)2005,JPO&NCIPI