发明名称 |
MANUFACTURING METHOD OF LAMINATED WAFER, AND TOOL FOR REMOVING OXIDE FILM OF LAMINATED WAFER |
摘要 |
PROBLEM TO BE SOLVED: To easily and inexpensively manufacture a laminated wafer with high quality. SOLUTION: A method of manufacturing a laminated wafer 6 in which a thinned bond wafer with a diameter smaller than that of a base wafer is formed on the base wafer includes steps of heat-treating; sucking and holding a region where an oxide film of the thinned bond wafer to be protected is formed by a vacuum chuck 21; exposing the side of the base wafer of the laminated wafer to the vapor of an etchant 40, thereby bringing the vapor of the etchant to the periphery on the side of the thinned bond wafer; and removing the oxide film formed on the surface other than a region protected by the vacuum chuck. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005243906(A) |
申请公布日期 |
2005.09.08 |
申请号 |
JP20040051450 |
申请日期 |
2004.02.26 |
申请人 |
SHIN ETSU HANDOTAI CO LTD;NAGANO DENSHI KOGYO KK |
发明人 |
TANAKA TADAO;FUJISAWA HIDEYUKI;MIYAGAWA TOSHIO |
分类号 |
H01L21/302;H01L21/02;H01L27/12;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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