发明名称 |
Method for adjusting voltage on a powered faraday shield |
摘要 |
An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.
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申请公布号 |
US2005194355(A1) |
申请公布日期 |
2005.09.08 |
申请号 |
US20050109921 |
申请日期 |
2005.04.19 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
LOHOKARE SHRIKANT P.;KUTHI ANDRAS;BAILEY ANDREW D.III |
分类号 |
H05H1/46;C23F1/00;H01J37/32;H01L21/3065;(IPC1-7):C23F1/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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