发明名称 FORMING METHOD OF PIEZOELECTRIC THIN FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To solve the problem of a conventional beveling processing that causes much waste in processes, materials, and processing times because the conventional beveling processing requires many processes such as growing of artificial crystal at first, then processing of external shape, and thinning processing. <P>SOLUTION: The problem above is solved by the forming method of a piezoelectric thin film, disclosed herein, which is a means of using the gas phase growing method and depositing thin film crystal on a base stand to form a piezoelectric tin film. Much piezoelectric thin film is deposited in the center of the piezoelectric thin film, and the deposition amount is adjusted to be less toward the outer circumference in order that the center of the piezoelectric thin film is made thicker and the outer circumferential parts of the piezoelectric thin film are thinner. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005244001(A) 申请公布日期 2005.09.08
申请号 JP20040053052 申请日期 2004.02.27
申请人 KYOCERA KINSEKI CORP 发明人 ISHIKAWA MANABU
分类号 H01L41/39;H01L41/18;H01L41/316;H03H3/02;(IPC1-7):H01L41/24 主分类号 H01L41/39
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