发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of stably processing the sample of an object to be processed for a long time. <P>SOLUTION: In the plasma processing apparatus for processing the sample placed on a sample stage 150 located in the inside of a processing chamber 100 by using plasma produced in the processing chamber 100, at least one of members 3 freely attachably/detachably fitted to/from one side of the inner wall 1 of the processing chamber has a part coated by a material 31 different from that of the other parts. A material resistant to plasma made of Y<SB>2</SB>O<SB>3</SB>, Yb<SB>2</SB>O<SB>3</SB>, or YF<SB>3</SB>as the major component, or a mixture 31 of them is coated to the surface of the member 3 in contact with the plasma. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005243987(A) 申请公布日期 2005.09.08
申请号 JP20040052807 申请日期 2004.02.27
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 ARAI MASATSUGU;TETSUKA TSUTOMU;KITSUNAI HIROYUKI;FURUSE MUNEO;SUMIYA MASANORI
分类号 C23C4/02;C23C4/04;C23C4/10;H01L21/3065 主分类号 C23C4/02
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