| 摘要 |
PROBLEM TO BE SOLVED: To effectively prevent byproducts from being adhered to the inside of an exhaust means in a substrate processing apparatus that supplies a plurality of processing gases alternately to process a substrate. SOLUTION: The substrate processing apparatus is provided with a processing chamber 201 that supplies a plurality of processing gases alternately to process a wafer 200 as a substrate, and an exhaust system 250 to exhaust an atmosphere within the processing chamber 201. The exhaust system 250 is comprised of an exhaust means 246 and an inert gas supply means 30. The exhaust means 246 is provided with an enclosure 21 including an outlet 23 and an inlet 22 connected to an atmosphere on the side of the processing chamber 201, and a transfer means 24 that is in the enclosure 21 and is provided between the inlet 22 and the outlet 23 to transfer the atmosphere on the side of the inlet 22 to the side of the outlet 23. The inert gas supply means 30 is provided with a gas supply tube 32 to feed an inert gas, and a heating means 31 that is provided on the way to heat the inert gas at a predetermined temperature, and it supplies a high-temperature inert gas to the downstream side of a vacuum pump 246. COPYRIGHT: (C)2005,JPO&NCIPI
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