| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of light oscillation at a long-wavelength region in which the oscillation wavelength band is 1.3μm or longer. SOLUTION: When composing the SDH-type semiconductor device, an active layer 5 is composed of GaAsSb or GaAsSbN, thus composing the semiconductor laser device having an SDH-type semiconductor laser element capable of oscillation at a long-wavelength region without decreasing the smoothness of slopes 22, 23 by a crystal surface (111). COPYRIGHT: (C)2005,JPO&NCIPI
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