| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate-recessed Ga-containing group III-V compound semiconductor field effect transistor which is immune to the surface and the interface and superior in performance, by removing damage at forming of a gate recess without increasing the manufacturing process steps. SOLUTION: A contact layer with a source electrode S and a drain electrode D formed as Ohmic electrodes uses not an n<SP>+</SP>GaN but an n-type semiconductor layer such as ZnO or In<SB>2</SB>O<SB>3</SB>conductive metal oxide layer 5 easy to etch. Thus, a recess structure is manufacturable without introducing damage in the surface of an AlGaN 4 for laminating a gate metal G thereon. COPYRIGHT: (C)2005,JPO&NCIPI
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