发明名称 Diffraction pattern suppression method for use in association with the optical inspection of semiconductor wafers, whereby a matched suppression pattern is temporarily created in an optical fashion using a light sensitive layer
摘要 <p>Method has the following steps: provision of a semiconductor wafer (5) to be examined, provision of an optical inspection unit (14), provision of an absorbing plate (20) with an optically transparent substrate (22) and a light-sensitive layer (26) between the wafer and a detector (16), illumination of the front side (10) of the wafer, and formation of a pattern of absorbing elements (24) using the light sensitive layer, illumination of the front side of the wafer for a second period and detection of the scattered light for the second time period. Independent claims are also included for the following:- (A) a further method for suppressing diffraction patterns during the optical inspection of semiconductor wafers and; (B) an optical inspection unit for inspecting a semiconductor wafer.</p>
申请公布号 DE102004008474(A1) 申请公布日期 2005.09.08
申请号 DE20041008474 申请日期 2004.02.20
申请人 INFINEON TECHNOLOGIES AG 发明人 BLOESS, HARALD;RICHTER, MATTHIAS
分类号 G01N21/45;G01N21/49;G01N21/95;G01N21/956;G03F7/20;H01L21/66;(IPC1-7):G01N21/49 主分类号 G01N21/45
代理机构 代理人
主权项
地址