Methods of Forming Power Semiconductor Devices Having Merged Split-Well Body Regions Therein And Devices Formed Thereby,申请号KR20007003676-传众专利搜索

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发明名称	Methods of Forming Power Semiconductor Devices Having Merged Split-Well Body Regions Therein And Devices Formed Thereby
摘要
申请公布号	KR100512646(B1)	申请公布日期	2005.09.07
申请号	KR20007003676	申请日期	2000.04.06
申请人		发明人
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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