| 摘要 |
The transistor has an emitter (E) with a semi-conducting material, a base (B) with three metallic layers, and a collector (C). An interface between the emitter and the base constitutes a Schottky diode. The collector is metallic and is separated from the base by an isolating thin layer (I) of around few nanometers. The thin layer constitutes a barrier with tunnel effect between the base and the collector. |
