发明名称 Halbleiter mit P-N-Schicht und Verfahren zu seiner Herstellung
摘要 Alloys for addition to a melt of pure germanium to produce a melt from which a semiconductive crystal can be grown consist of Sb and Ga in the proportions 20-60 : 1, and Sb and In in the proportions 1 : 2.5-5. An alloy of As and Ga in unspecified proportions is also mentioned. These alloys are added to the germanium melt in the proportions of 1-100 mg. Sb:Ga alloy, and 5-500 mg. Sb:In alloy respectively to 100 grams of germanium.
申请公布号 DE967930(C) 申请公布日期 1957.12.27
申请号 DE1953G012444 申请日期 1953.08.14
申请人 GENERAL ELECTRIC COMPANY 发明人 HALL ROBERT NOEL
分类号 C30B15/20 主分类号 C30B15/20
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