发明名称 |
METHOD FOR FORMING A DIELECTRIC STACK |
摘要 |
<p>The present invention provides a method for fabricating a dielectric stack in an integrated circuit comprising the steps of (i) forming a high-k dielectric layer on a semiconductor substrate, (ii) subjecting the semiconductor substrate with the high-k dielectric layer to a nitrogen comprising vapor phase reactant and silicon comprising vapor phase reactant in a plasma-enhanced chemical vapor deposition process (PECVD) or a plasma-enhanced atomic layer chemical vapor deposition (PE ALCVD) process. Furthermore, the present invention provides a dielectric stack in an integrated circuit comprising (i) a high-k dielectric layer comprising at least a high-k material, (ii) a dielectric layer comprising at least silicon and nitrogen; (iii) an intermediate layer disposed between the high-k dielectric layer and the dielectric layer, the intermediate layer comprising the high-k material, silicon, and nitrogen.</p> |
申请公布号 |
EP1570525(A1) |
申请公布日期 |
2005.09.07 |
申请号 |
EP20030782011 |
申请日期 |
2003.12.09 |
申请人 |
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM (IMEC);ASM AMERICA, INC. |
发明人 |
CHEN, JERRY;WILMAN, TSAI;CAYMAX, MATTY;MAES, JAN-WILLEM |
分类号 |
H01L21/316;C23C16/02;C23C16/30;C23C16/34;C23C16/40;C23C16/44;C23C16/455;C23C16/56;H01L21/28;H01L21/314;H01L21/318;H01L21/471;H01L29/43;H01L29/49;H01L29/51;H01L29/772;(IPC1-7):H01L29/43 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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