发明名称 |
Method for operating an electrically erasable and programmable memory cell and corresponding memory device |
摘要 |
<p>The semi conductor memory cell is of a read write type and has a canal region [2] that operates in a first and second direction. Information is stored based upon the difference in operating voltage in the canal region. The process is not affected by cross coupling between memory cells.</p> |
申请公布号 |
EP1571674(A2) |
申请公布日期 |
2005.09.07 |
申请号 |
EP20050004953 |
申请日期 |
2005.03.07 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DEPPE, JOACHIM;ISLER, MARK;LUDWIG, CHRISTOPH;SACHSE, JENS-UWE;SCHLEY, JAN-MALTE;MIKALO, RICARDO PABLO |
分类号 |
G11C16/02;G11C11/56;G11C16/04;G11C16/26;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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