发明名称 Built-in test for multiple memory circuits
摘要 A memory test circuit includes a collar for coupling to a memory device for switching an address bus and a data bus of the memory device between an external circuit and the collar in response to a switching signal; and a controller coupled to the collar for generating the switching signal, a test vector, and control signals between the controller and the collar on as few as seven control lines for testing the memory device with the test vector. Multiple memory devices of various sizes may be tested with the same controller concurrently.
申请公布号 US6941494(B1) 申请公布日期 2005.09.06
申请号 US20010027311 申请日期 2001.12.21
申请人 LSI LOGIC CORPORATION 发明人 ANDREEV ALEXANDER E.;VIKHLIANTSEV IGOR A.;IVANOVIC LAV D.
分类号 G11C29/00;G11C29/26;(IPC1-7):G11C29/00 主分类号 G11C29/00
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