| 发明名称 |
Method for manufacturing semiconductor device |
| 摘要 |
An alignment mark section on a semiconductor substrate has two grooves which are filled with silicon oxide. The surface of the portion of the semiconductor substrate sandwiched by these grooves is lower than other portions of the semiconductor substrate to produce a step having a predetermined depth in the alignment mark section.
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| 申请公布号 |
US6939777(B2) |
申请公布日期 |
2005.09.06 |
| 申请号 |
US20040863443 |
申请日期 |
2004.06.09 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
OHTO KENICHI;TERAUCHI TAKASHI |
| 分类号 |
H01L21/027;H01L21/00;H01L21/301;H01L21/46;H01L21/76;H01L21/78;H01L21/8242;H01L23/544;H01L27/10;H01L27/108;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/027 |
| 代理机构 |
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代理人 |
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