| 摘要 |
When a p-type Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O-type layer is grown based on a metal organic vapor-phase epitaxy process, the p-type Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O-type layer is annealed in an oxygen-containing atmosphere during and/or after completion of the growth of the p-type Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O-type layer. In addition, a vapor-phase epitaxy process of a semiconductor layer is proceed while irradiating ultraviolet light to the surface of a substrate to be grown and source gasses. In addition, when a Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O-type buffer layer that is oriented so as to align the c-axis thereof to a thickness-wise direction is formed by an atomic layer epitaxy process, a metal monoatomic layer is grown at first. In addition, a ZnO-base semiconductor active layer is formed by using a semiconductor material mainly composed of ZnO containing Se or Te. A light emitting device is formed by using these techniques.
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