发明名称 Undoped and fluorinated amorphous carbon film as pattern mask for metal etch
摘要 A method for etching a metal layer formed on a substrate to form a metal line, using an amorphous carbon layer as a pattern mask. One embodiment of the method of the invention etches a metal layer formed on a substrate, for forming a metal line, by depositing an amorphous carbon layer on the metal layer, patterning the amorphous carbon layer to provide a pattern mask on the metal layer, thus exposing portions of said metal layer; and etching the exposed portions of the metal layer, to form a metal line. In an embodiment, the metal layer comprises a copper layer.
申请公布号 US6939808(B2) 申请公布日期 2005.09.06
申请号 US20020211453 申请日期 2002.08.02
申请人 APPLIED MATERIALS, INC. 发明人 TZOU EUGENE;YUAN JIE;YE YAN
分类号 H01L21/033;H01L21/314;H01L21/3213;(IPC1-7):H01L21/302 主分类号 H01L21/033
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