| 摘要 |
The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition Si<SUB>v</SUB>N<SUB>w</SUB>C<SUB>x</SUB>O<SUB>y</SUB>H<SUB>z</SUB>, where 0.1<=v<=0.9, 0<=w<=0.5, 0.01<=0.5, 0.01<=x<=0.9,0<=y<=0.7,0.01<=z<=0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition Si<SUB>v</SUB>N<SUB>w</SUB>C<SUB>x</SUB>O<SUB>y</SUB>H<SUB>z</SUB>, where 0.1<v<0.8, 0<w<0.8, 0.05<x<0.8, 0<y<0.3, 0.05<z<0.8 for v+w+x+y+z=1 and then converting the polymeric preceramic layer into a ceramic diffusion barrier by thermal methods.
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