发明名称 |
Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects |
摘要 |
A method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes the following steps: a layer of silicon dioxide is formed on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface and then nitrogen is incorporated at the silicon dioxide/silicon carbide interface for reduction in an interface trap density. The silicon carbide substrate, in one embodiment, includes a n-type 4H-silicon carbide.
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申请公布号 |
US6939756(B1) |
申请公布日期 |
2005.09.06 |
申请号 |
US20010818193 |
申请日期 |
2001.03.26 |
申请人 |
AUBURN UNIVERSITY |
发明人 |
CHUNG GILYONG;TIN CHIN CHE;WILLIAMS JOHN R.;MCDONALD KYLE;VENTRA MASSIMILIANO DI;WELLER ROBERT A.;PANTELIDES SOKRATES T.;FELDMAN LEONARD C. |
分类号 |
H01L21/04;H01L21/3115;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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