| 发明名称 |
Semiconductor device with high permittivity gate dielectric film |
| 摘要 |
A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.
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| 申请公布号 |
US6940118(B2) |
申请公布日期 |
2005.09.06 |
| 申请号 |
US20020299197 |
申请日期 |
2002.11.18 |
| 申请人 |
RENESAS TECHNOLOGY CORPORATION |
发明人 |
IWASAKI TOMIO;MORIYA HIROSHI;MIURA HIDEO;IKEDA SHUJI |
| 分类号 |
H01L21/02;H01L21/28;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/105;H01L27/108;H01L29/423;H01L29/43;H01L29/49;H01L29/51;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/02 |
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