发明名称 |
Equipment for communication system and semiconductor integrated circuit device |
摘要 |
Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of delta-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of delta-doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the delta-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained.
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申请公布号 |
US6940127(B2) |
申请公布日期 |
2005.09.06 |
申请号 |
US20030631086 |
申请日期 |
2003.07.31 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YOKOGAWA TOSHIYA;TAKAHASHI KUNIMASA;UCHIDA MASAO;KITABATAKE MAKOTO;KUSUMOTO OSAMU |
分类号 |
H01L21/82;H01L27/06;H01L29/10;H01L29/15;H01L29/24;H01L29/36;H01L29/772;H01L29/812;H01L29/872;H03D7/12;H03F3/60;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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