发明名称 |
Vertical NROM and methods for making thereof |
摘要 |
Vertical NROM devices are made in a substantially single crystalline silicon substrate having a planar surface. The vertical NROM cell and device has a first region and a second region spaced apart from one another by a channel. A dielectric is spaced apart from the channel to capture charges injected from the channel onto the dielectric. A gate is positioned over the dielectric and spaced apart therefrom and controls the flow of current through the channel. In the improvement of the present invention, a portion of the channel is substantially perpendicular to the top planar surface of the substrate. Methods for making the vertical NROM cell and array are also disclosed.
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申请公布号 |
US6940125(B2) |
申请公布日期 |
2005.09.06 |
申请号 |
US20030407627 |
申请日期 |
2003.04.04 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
KIANIAN SOHRAB;LEE DANA |
分类号 |
H01L21/8246;H01L27/115;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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