| 发明名称 |
Double gate field effect transistor with diamond film |
| 摘要 |
A double gate silicon over insulator transistor may be formed wherein the bottom gate electrode is formed of a doped diamond film. The doped diamond film may be formed in the process of semiconductor manufacture resulting in an embedded electrode. The diamond film may be advantageous as a heat spreader.
|
| 申请公布号 |
US6940096(B2) |
申请公布日期 |
2005.09.06 |
| 申请号 |
US20020135423 |
申请日期 |
2002.04.30 |
| 申请人 |
INTEL CORPORATION |
发明人 |
RAVI KRAMADHATI V. |
| 分类号 |
H01L21/336;H01L21/84;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L31/031 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
