发明名称 Contact hole standard test device, method of forming the same, method of testing contact hole, method and apparatus for measuring a thickness of a film, and method of testing a wafer
摘要 The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the insulating layer, so that a part of a top surface of the at least dummy film is shown through the at least one opening, wherein the at least dummy film has a predetermined constant thickness at least around the at least one opening. The standard test device makes it easily possible to determine or measure a thickness of a residual film on a bottom of the contact hole.
申请公布号 US6940296(B2) 申请公布日期 2005.09.06
申请号 US20040843158 申请日期 2004.05.11
申请人 发明人
分类号 G01N23/225;(IPC1-7):G01R31/304 主分类号 G01N23/225
代理机构 代理人
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