发明名称 |
Contact hole standard test device, method of forming the same, method of testing contact hole, method and apparatus for measuring a thickness of a film, and method of testing a wafer |
摘要 |
The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the insulating layer, so that a part of a top surface of the at least dummy film is shown through the at least one opening, wherein the at least dummy film has a predetermined constant thickness at least around the at least one opening. The standard test device makes it easily possible to determine or measure a thickness of a residual film on a bottom of the contact hole.
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申请公布号 |
US6940296(B2) |
申请公布日期 |
2005.09.06 |
申请号 |
US20040843158 |
申请日期 |
2004.05.11 |
申请人 |
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发明人 |
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分类号 |
G01N23/225;(IPC1-7):G01R31/304 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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