发明名称 |
Heat-treating methods and systems |
摘要 |
A method involves pre-heating a workpiece to an intermediate temperature, heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, and enhancing cooling of the workpiece. Enhancing cooling may involve absorbing radiation thermally emitted by the workpiece. An apparatus includes a first heating source for heating a first surface of a semiconductor wafer, a second heating source for heating a second surface of the semiconductor wafer, and a first cooled window disposed between the first heating source and the semiconductor wafer.
|
申请公布号 |
US6941063(B2) |
申请公布日期 |
2005.09.06 |
申请号 |
US20010005186 |
申请日期 |
2001.12.04 |
申请人 |
MATTSON TECHNOLOGY CANADA, INC. |
发明人 |
CAMM DAVID MALCOLM;ELLIOTT J. KIEFER |
分类号 |
H01L21/265;C30B31/12;F27D19/00;F27D99/00;H01L21/00;H01L21/26;H01L21/268;H01L21/324;(IPC1-7):F26B19/00 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|