发明名称 |
Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base |
摘要 |
Structure and a method are provided for making a bipolar transistor, the bipolar transistor including a collector, an intrinsic base overlying the collector, an emitter overlying the intrinsic base, and an extrinsic base spaced from the emitter by a gap, the gap including at least one of an air gap and a vacuum void.
|
申请公布号 |
US6940149(B1) |
申请公布日期 |
2005.09.06 |
申请号 |
US20040708563 |
申请日期 |
2004.03.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIVAKARUNI RAMA;FREEMAN GREGORY;KHATER MARWAN;TONTI WILLIAM |
分类号 |
H01L21/331;H01L27/06;H01L27/082;H01L29/06;H01L29/737;H01L31/072;(IPC1-7):H01L27/082 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|